17.4 A 14nm 1.1Mb embedded DRAM macro with 1ns access

Author:

Fredeman Gregory,Plass Donald,Mathews Abraham,Reyer Kenneth,Knips Thomas,Miller Thomas,Gerhard Elizabeth,Kannambadi Dinesh,Paone Chris,Lee Dongho,Rainey Daniel,Sperling Michael,Whalen Michael,Burns Steven

Publisher

IEEE

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Partially Isolated Dual Work Function Gate IGZO TFT With Obviously Reduced Leakage Current for 3D DRAMs;IEEE Journal of the Electron Devices Society;2024

2. CorcPUM: Efficient Processing Using Cross-Point Memory via Cooperative Row-Column Access Pipelining and Adaptive Timing Optimization in Subarrays;2023 60th ACM/IEEE Design Automation Conference (DAC);2023-07-09

3. Compute-in-eDRAM with Backend Integrated Indium Gallium Zinc Oxide Transistors;2021 IEEE International Symposium on Circuits and Systems (ISCAS);2021-05

4. Overview of Embedded Flash Memory Technology;Integrated Circuits and Systems;2017-09-10

5. Three-Dimensional Dynamic Random Access Memories Using Through-Silicon-Vias;IEEE Journal on Emerging and Selected Topics in Circuits and Systems;2016-09

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