Light Extraction Efficiency Analysis of Flip-Chip Ultraviolet Light-Emitting Diodes With Patterned Sapphire Substrate-Reference-Cited by-同舟云学术

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Light Extraction Efficiency Analysis of Flip-Chip Ultraviolet Light-Emitting Diodes With Patterned Sapphire Substrate

Published:2018-08 Issue:4 Volume:10 Page:1-13
ISSN:1943-0655
Container-title:IEEE Photonics Journal
language:
Short-container-title:IEEE Photonics J.

Author:

Ooi Yu Kee^ORCID,Zhang Jing^ORCID

Funder

Rochester Institute of Technology Kate Gleason endowed professorship fund

Office of Naval Research

National Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

https://ieeexplore.ieee.org/ielaam/4563994/8392551/8384025-aam.pdf

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the origin of the enhanced light extraction efficiency of DUV LED by using inclined sidewalls;Optics Letters;2024-05-31

2. Is It Possible to Make Thin p-GaN Layer for AlGaN-Based Deep Ultraviolet Micro Light Emitting Diodes?;IEEE Electron Device Letters;2024-03

3. Influence of the thickness of p-GaN ohmic contact layer on the performance of AlGaN-based deep-ultraviolet light-emitting diodes;Materials Science in Semiconductor Processing;2024-02

4. Performance assessment of ultrathin sapphire wafer polishing with layer stacked clamping (LSC) method;The International Journal of Advanced Manufacturing Technology;2023-06-19

5. Realization of Low Dislocation Density AlN on Patterned Sapphire Substrate by Hydride Vapor‐Phase Epitaxy for Deep Ultraviolet Light‐Emitting Diodes;physica status solidi (a);2023-05-23

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