A Wideband and High-Linearity E-B and Transmitter Integrated in a 55-nm SiGe Technology for Backhaul Point-to-Point 10-Gb/s Links

Author:

del Rio DavidORCID,Gurutzeaga Inaki,Rezola AinhoaORCID,Sevillano Juan F.,Velez Igone,Gunnarsson Sten E.,Tamir Nataly,Saavedra Carlos E.,Gonzalez-Jimenez Jose Luis,Siligaris Alexandre,Dehos Cedric,Berenguer Roc

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Design of a 75-85 GHz Driver Amplifier in 0.1-μm Gallium Arsenide pHEMT Technology;2023 Asia-Pacific Microwave Conference (APMC);2023-12-05

2. Demonstration of M-QAM OFDM bidirectional 60/25 GHz transmission over 10 km Fiber, 100 m FSO and 2 m radio seamless heterogeneous fronthaul link;Optical Fiber Technology;2023-05

3. Simplified independent triple-sideband signal generation and transmission scheme based on one I/Q modulator at 0.3-THz;Optics Express;2023-02-27

4. A Transformer-Based Up-Conversion Mixer With Wide IF Bandwidth for Multi-Beam 5G New Radio;2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2022-11-27

5. A Broadband E-band Driver Amplifier in 0.1 μm GaAs pHEMT Technology;2022 IEEE MTT-S International Wireless Symposium (IWS);2022-08-12

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