Design of a 75-85 GHz Driver Amplifier in 0.1-μm Gallium Arsenide pHEMT Technology
Author:
Affiliation:
1. University of Technology Sydney,School of Electrical and Data Engineering,Sydney,Australia
2. AltumRF,Sydney,Australia
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10439662/10439663/10439901.pdf?arnumber=10439901
Reference8 articles.
1. A 50-Gb/s Compact RadCom E-Band Transmitter With Phase-Controlled Push–Push Quadrupler and Stacked-FET Power Amplifier
2. A Wideband and High-Linearity E-B and Transmitter Integrated in a 55-nm SiGe Technology for Backhaul Point-to-Point 10-Gb/s Links
3. A 24-GHz High-Isolation CMOS On–Off Keying Modulator With Reduced Input Impedance Variation
4. A W-band driver amplifier in 0.1 µm pHEMT Gallium Arsenide process
5. A 71-80 GHz medium power amplifier using 4-mil 0.15-μm GaAs-PHEMT technology;Tsai
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