Linear Analysis of High-Frequency Field-Effect Transistors Using the CN-FDTD Method
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Link
http://xplorestaging.ieee.org/ielx7/22/7938544/07819545.pdf?arnumber=7819545
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Hexahedron-Based Control Volume Finite Element Method for Fully Coupled Nonlinear Drift-Diffusion Transport Equations in Semiconductor Devices;IEEE Transactions on Microwave Theory and Techniques;2022-06
2. Simulation of Recessed Gate Pseudomorphic AlGaAs/InGaAs/GaAs HEMT for RF Applications;2022 6th International Conference on Devices, Circuits and Systems (ICDCS);2022-04-21
3. Analysis of multiconductor transmission lines using the time domain method of lines;AEU - International Journal of Electronics and Communications;2021-08
4. Numerical analysis of high frequency GaAs FET transistor using alternating direction implicit (ADI) finite-difference time-domain method; Distributed modeling approach;AEU - International Journal of Electronics and Communications;2021-01
5. Time-domain analysis of a CRLH coupled-line coupler using the CN-FDTD method;International Journal of Microwave and Wireless Technologies;2018-11-21
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