Numerical analysis of high frequency GaAs FET transistor using alternating direction implicit (ADI) finite-difference time-domain method; Distributed modeling approach-Reference-Cited by-同舟云学术

Numerical analysis of high frequency GaAs FET transistor using alternating direction implicit (ADI) finite-difference time-domain method; Distributed modeling approach

Published:2021-01 Issue: Volume:128 Page:153514
ISSN:1434-8411
Container-title:AEU - International Journal of Electronics and Communications
language:en
Short-container-title:AEU - International Journal of Electronics and Communications

Author:

Mayani Mahdieh Gholami,Pirhadi Abbas,Asadi Shahrooz

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering

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