Hexahedron-Based Control Volume Finite Element Method for Fully Coupled Nonlinear Drift-Diffusion Transport Equations in Semiconductor Devices

Author:

Li Tan-Yi1ORCID,Zhan Qiwei1ORCID,Chen Wenchao1ORCID,Wang Dawei2ORCID,Wang Yin-Da1ORCID,Li Guangrong3ORCID,Wang Wei-Jie3ORCID,Xie Hao4ORCID,Kang Kai5,Yin Wen-Yan1ORCID

Affiliation:

1. Key Laboratory of Advanced Micro/Nano Electronic Devices and Smart Systems of Zhejiang Province, College of Information Science and Electronic Engineering, Innovative Institute of Electromagnetic Information and Electronic Integration, Zhejiang University, Hangzhou, China

2. Engineering Research Center of Smart Microsensors and Microsystems of MOE, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China

3. Institute of Applied Physics and Computational Mathematics, Beijing, China

4. School of Information and Electrical Engineering, Zhejiang University City College, Hangzhou, China

5. School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China

Funder

National Natural Science Foundation of China

Zhejiang Provincial Natural Science Foundation of China

Science Challenge Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Reference56 articles.

1. A Hybrid Mesh DGTD Algorithm Based on Virtual Element for Tetrahedron and Hexahedron

2. Meeting the challenge for automated conformal hexahedral meshing;blacker;Proc 9th Int Meshing Roundtable,2000

3. Cell-centered finite volume schemes for semiconductor device simulation

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