Skeleton-Enhanced Discontinuous Galerkin Method for 3-D Nonlinear Semiconductor Modeling-Reference-Cited by-同舟云学术

Skeleton-Enhanced Discontinuous Galerkin Method for 3-D Nonlinear Semiconductor Modeling

Published:2023-06 Issue:6 Volume:71 Page:2396-2408
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Feng Haoqiang¹,Li Tan-Yi¹^ORCID,Zhuang Mingwei²^ORCID,Xie Hao¹^ORCID,Yin Wen-Yan¹^ORCID,Zhan Qiwei¹^ORCID

Affiliation:

1. Key Laboratory of Advanced Micro/Nano Electronic Devices and Smart Systems of Zhejiang Province, Innovative Institute of Electromagnetic Information and Electronic Integration, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China

2. Institute of Electromagnetics and Acoustics, School of Electronic Science and Engineering, Xiamen University, Xiamen, China

Funder

National Natural Science Foundation of China

Zhejiang Provincial Natural Science Foundation of China

Defense Industrial Technology Development Program

Xiaomi Young Scholar Award

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/10144346/10026598.pdf?arnumber=10026598

Reference52 articles.

1. Device Simulation for Silicon ULSI

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3. 3D finite element modeling and simulation of industrial semiconductor devices including impact ionization

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5. Temperature-Dependent Threshold Voltage Extraction of FinFETs Using Noise Measurements

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