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GaN FET Nonlinear Modeling Based on Double Pulse ${ I}/{ V}$ Characteristics

  • Published:2014-12 Issue:12 Volume:62 Page:3262-3273
  • ISSN:0018-9480
  • Container-title:IEEE Transactions on Microwave Theory and Techniques
  • language:
  • Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Santarelli Alberto,Niessen Daniel,Cignani Rafael,Gibiino Gian Piero,Traverso Pier Andrea,Florian Corrado,Schreurs Dominique M. M.-P.,Filicori Fabio

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of RF Device Behavior Model: Measurement Techniques, Applications, and Challenges;Micromachines;2023-12-25

2. Artificial Intelligence-Based Modeling of Microwave GaN HEMT Power Dissipation;2023 22nd Mediterranean Microwave Symposium (MMS);2023-10-30

3. Harmonic Included CSWPL Model for Broadband PA Design Based on GaN HEMTs;IEEE Transactions on Electron Devices;2023

4. Temperature Dependent I-V Models for Microwave Transistor Using Radial Basis NNs, Generalized Regression NNs and Feedforward NN;2022 5th International Conference on Multimedia, Signal Processing and Communication Technologies (IMPACT);2022-11-26

5. Equivalent‐circuit extraction for gallium nitride electron devices: Direct versus optimization‐empowered approaches;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-04-03
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