Artificial Intelligence-Based Modeling of Microwave GaN HEMT Power Dissipation
Author:
Affiliation:
1. INSAT, University of Carthage Microwave Electronics Research laboratory, FST, University of Tunis El Manar,Tunis,Tunisia
2. Military Research Center Military Base of Aouina,Tunis,Tunisia
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10420828/10420847/10420848.pdf?arnumber=10420848
Reference15 articles.
1. GaN-on-Si Power Technology: Devices and Applications
2. The Doherty Power Amplifier: Review of Recent Solutions and Trends
3. Linearity and Efficiency in 5G Transmitters: New Techniques for Analyzing Efficiency, Linearity, and Linearization in a 5G Active Antenna Transmitter Context
4. A Fully Integrated C-Band GaN MMIC Doherty Power Amplifier With High Efficiency and Compact Size for 5G Application
5. A Scalable Knowledge-Based Neural Network Model for GaN HEMTs With Accurate Trapping and Self-Heating Effects Characterization
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