Temperature Dependent I-V Models for Microwave Transistor Using Radial Basis NNs, Generalized Regression NNs and Feedforward NN
Author:
Affiliation:
1. Nazarbayev University,Electrical Engg.,New Delhi,India
2. Nazarbayev University,Electrical and Computer Engineering,Nur-Sultan City,Kazakhstan
3. University of Sharjah,Department of Electrical Engineering,Sharjah,UAE
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10028979/10028744/10029074.pdf?arnumber=10029074
Reference21 articles.
1. Small signal behavioral modeling technique of GaN high electron mobility transistor using artificial neural network: An accurate, fast, and reliable approach
2. An Artificial Neural Network-Based Electrothermal Model for GaN HEMTs With Dynamic Trapping Effects Consideration
3. Demonstration of CAD Deployability for GPR Based Small-Signal Modelling of GaN HEMT
4. A Generic and Efficient Globalized Kernel Mapping-Based Small-Signal Behavioral Modeling for GaN HEMT
5. Decision Tree Based Small-Signal Modelling of GaN HEMT and CAD Implementation
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