A Novel Random Telegraph Signal Method to Study Program/Erase Charge Lateral Spread and Retention Loss in a SONOS Flash Memory-Reference-Cited by-同舟云学术

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A Novel Random Telegraph Signal Method to Study Program/Erase Charge Lateral Spread and Retention Loss in a SONOS Flash Memory

Published:2011-03 Issue:3 Volume:58 Page:623-630
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ma Huan-Chi,Chou You-Liang,Chiu Jung-Piao,Chung Yueh-Ting,Lin Tung-Yang,Wang Tahui,Chao Yuan-Peng,Chen Kuang-Chao,Lu Chih-Yuan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5718234/05680603.pdf?arnumber=5680603

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Frequency and Random Telegraph Noise in 14-nm Bulk Si Charge-Trap Transistors;IEEE Transactions on Electron Devices;2023-06

2. Triple-Level-Cell/Single-Level-Cell Mix-Mode Operation Induced Data Retention Degradation in 3-D NAND Flash Memories;IEEE Electron Device Letters;2021-12

3. Investigation of Electron and Hole Lateral Migration in Silicon Nitride and Data Pattern Effects on ${V}_{{t}}$ Retention Loss in a Multilevel Charge Trap Flash Memory;IEEE Transactions on Electron Devices;2019-12

4. Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method;Applied Physics Letters;2017-07-17

5. Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory;IEEE Electron Device Letters;2017-01

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