Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method

Author:

Liu Yu-Heng1ORCID,Jiang Cheng-Min1,Lin Hsiao-Yi1,Wang Tahui1ORCID,Tsai Wen-Jer2,Lu Tao-Cheng2,Chen Kuang-Chao2,Lu Chih-Yuan2

Affiliation:

1. Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan

2. Macronix International Company, Ltd., No. 16, Li-Hsin Road, Science Based Industrial Park, Hsinchu 300, Taiwan

Funder

Ministry of Science and Technology, Taiwan (MOST)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference21 articles.

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2. J. Jang , H.S. Kim , W. Cho , H. Cho , J. Kim , S. I. Shim , Y. Jang , J.H. Jeong , B.K. Son , D. W. Kim , K. Kim , J.J. Shim , J. S. Lim , K.H. Kim , S. Y. Yi , J.Y. Lim , D. Chung , H.C. Moon , S. Hwang , J.W. Lee , Y.H. Son , U.I. Chung , and W.S. Lee , in Digest of Technical Papers-Symposium on VLSI Technology, Kyoto, Japan, 16–18 June 2009, pp. 192−193.

3. W. J. Tsai , S. H. Gu , N. K. Zous , C. C. Yeh , C. C. Liu , C. H. Chen , T. Wang , S. Pan , and C.Y. Lu , in Proceedings of the International Reliability Physics Symposium, Dallas, TX, USA, 7–11 April 2002, pp. 34−38.

4. H.J. Kang , N. Choi , S.M. Joe , J.H. Seo , E. Choi , S.K. Park , B.G. Park , and J.H. Lee , in Digest of Technical Papers-Symposium on VLSI Technology, Kyoto, Japan, 16–18 June 2015, pp. T182−T183.

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