Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses
Author:
Affiliation:
1. Univ Lyon, INSA-Lyon,Laboratoire Ampère,Villeurbanne Cedex,France,69621
2. STMicroelectronics,Tours Cedex 2,France,37071
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9933917/9933992/09934143.pdf?arnumber=9934143
Reference8 articles.
1. Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses
2. Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs
3. Cumulative Hot-Electron Trapping in GaN-Based Power HEMTs Observed by an Ultra-Fast (10V/ns) on-Wafer Methodology;modolo;IEEE J Emerg Sel Top Power Electron,2021
4. A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects
5. On the Extraction of PiN Diode Design Parameters for Validation of Integrated Power Converter Design
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