A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects-Reference-Cited by-同舟云学术

A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects

Published:2020-11 Issue: Volume:114 Page:113830
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Modolo Nicola,Meneghini Matteo,Barbato Alessandro,Nardo Arianna,De Santi Carlo,Meneghesso Gaudenzio,Zanoni Enrico,Sicre Sebastien,Prechtl Gerhard,Curatola Gilberto

Funder

INTERNET OF THINGS: SVILUPPI METODOLOGICI, TECNOLOGICI E APPLICATIVI

Italian Ministry of Education, Universities and Research

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Trapping and high field related issues in GaN power HEMTs;Meneghesso;Tech. Dig. Int. Electron Devices Meet. IEDM,2015

2. Evidence of hot-electron effects during hard switching of AlGaN/GaN HEMTs;Rossetto;IEEE Trans. Electron Devices,2017

3. Charge Trapping and Stability of E-Mode p-gate GaN HEMT sUnder Soft-and Hard-Switching Conditions, IRPS;Masin,2020

4. The impact of hot electrons and self-heating during hard-switching in AlGaN/GaN HEMTs;Yang;IEEE Trans. Electron Devices,2020

5. Current collapse in GaN heterojunction field effect transistors for high-voltage switching applications;Joh;IEEE Int. Reliab. Phys. Symp. Proc.,2014

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1. Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-08

2. A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

3. Characterization of the Dynamic RON of 600 V GaN Switches under Operating Conditions;Electronics;2023-02-13

4. A Reconfigurable AC Power Cycling Test Setup for Comprehensive Reliability Evaluation of GaN HEMTs;IEEE Transactions on Industry Applications;2023-01

5. Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses;2022 International Semiconductor Conference (CAS);2022-10-12