On the Extraction of PiN Diode Design Parameters for Validation of Integrated Power Converter Design-Reference-Cited by-同舟云学术

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On the Extraction of PiN Diode Design Parameters for Validation of Integrated Power Converter Design

Published:2005-05 Issue:3 Volume:20 Page:660-670
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:en
Short-container-title:IEEE Trans. Power Electron.

Author:

Garrab H.,Allard B.,Morel H.,Ammous K.,Ghedira S.,Amimi A.,Besbes K.,Guichon J.-M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/63/30824/01427824.pdf?arnumber=1427824

Cited by 46 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel Parameters Extraction Method of High‐Speed PIN Diode for Power Integrated Circuit;Nanodevices for Integrated Circuit Design;2023-10-17

2. Application of the Double Source Switching Test to GaN HEMTs;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

3. New Methodology for Defining Integration Limits Used for Switching Energy Computation in Power Devices;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

4. Failure degradation similarities on power SiC MOSFET devices submitted to short-circuit stress and accelerated switching conditions;Microelectronics Reliability;2023-09

5. Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses;2022 International Semiconductor Conference (CAS);2022-10-12

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