The effect of forming gas annealing on Al/Ti/n-Si contacts
Author:
Affiliation:
1. National Institute for R&D in Microtechnology - IMT,Bucharest,Romania
2. University “Politehnica”,Bucharest,Romania
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9933917/9933992/09934472.pdf?arnumber=9934472
Reference9 articles.
1. A model to non-uniform Ni Schottky contact on SiC annealed at elevated temperatures
2. The effect of the post-metallization annealing of Ni/n-type 4H-SiC SCHOTTKY contact
3. Fabrication and electrical characterization of nickel/p-Si Schottky diode at low temperature
4. Dependence of characteristic diode parameters on sample temperature in Ni/epitaxy n-Si contacts
5. Enhanced Non-Uniformity Modeling of 4H-SiC Schottky Diode Characteristics Over Wide High Temperature and Forward Bias Ranges
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1. Enhanced Method of Schottky Barrier Diodes Performance Assessment;Romanian Journal of Information Science and Technology;2023-03-27
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