A model to non-uniform Ni Schottky contact on SiC annealed at elevated temperatures-Reference-Cited by-同舟云学术

A model to non-uniform Ni Schottky contact on SiC annealed at elevated temperatures

Author:

Pristavu G.¹,Brezeanu G.¹,Badila M.¹,Pascu R.¹²,Danila M.²,Godignon P.³

Affiliation:

1. Electronics, Telecommunications and Information Technology, University Politehnica Bucharest, Bucharest 061071, Romania

2. National Institute for Research and Development in Microtechnologies, Erou Iancu Nicolae Street 126A, 077190 Bucharest, Romania

3. Centro Nacional de Microelectronica, C/del Til·lers. Campus Universitat Autònoma de Barcelona, 08193 Barcelona, Spain

Funder

PNII National Romanian Project

Sectoral Operational Programme Human Resources Development 2007-2013

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference14 articles.

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