Silicon–Carbon Stressors With High Substitutional Carbon Concentration and In Situ Doping Formed in Source/Drain Extensions of n-Channel Transistors-Reference-Cited by-同舟云学术

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Silicon–Carbon Stressors With High Substitutional Carbon Concentration and In Situ Doping Formed in Source/Drain Extensions of n-Channel Transistors

Published:2008-05 Issue:5 Volume:29 Page:460-463
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Hoong-Shing Wong ,Kah-Wee Ang ,Lap Chan ,Keat-Mun Hoe ,Chih-Hang Tung ,Balasubramanian N.,Weeks D.,Bauer M.,Spear J.,Thomas S.G.,Samudra G.,Yee-Chia Yeo

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4494611/04479857.pdf?arnumber=4479857

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