Author:
Steeples K.,Saunders I.J.,Smith J.G.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
22 articles.
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1. Electrical isolation of n- and p-In0.53Ga0.47As epilayers using ion irradiation;Journal of Applied Physics;2003-11-15
2. FeGe liquid metal ion source for maskless isolation implants in InP;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-07
3. Ion implantation for isolation of III-V semiconductors;Materials Science Reports;1990-01
4. References;Thin Films by Chemical Vapour Deposition;1990
5. Formation of buried high-resistivity layers in InP crystals by MeV nitrogen ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-03