Enhanced Band-to-Band-Tunneling-Induced Hot-Electron Injection in p-Channel Flash by Band-gap Offset Modification-Reference-Cited by-同舟云学术

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Enhanced Band-to-Band-Tunneling-Induced Hot-Electron Injection in p-Channel Flash by Band-gap Offset Modification

Published:2006-09 Issue:9 Volume:27 Page:749-751
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wang C.-C.,Chang-Liao K.-S.,Lu C.-Y.,Wang T.-K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/35457/01683867.pdf?arnumber=1683867

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Operation characteristics of Poly-Si nanowire charge-trapping flash memory devices with SiGe and Ge buried channels;Vacuum;2017-06

2. Enhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device With SiGe Buried Channel;IEEE Electron Device Letters;2014-10

3. (Invited) Improved Operation Characteristics in Charge-Trapping Flash Memory Devices with Engineered Dielectric Stack and SiGe Channel;ECS Transactions;2013-08-31

4. Performance Enhancement on p-Channel Charge-Trapping Flash Memory Device With Epitaxial Si/Ge Super-Lattice Channel;IEEE Electron Device Letters;2013-05

5. Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection;Thin Solid Films;2013-04

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