Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection-Reference-Cited by-同舟云学术

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Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection

Published:2013-04 Issue: Volume:533 Page:1-4
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Liu Li-Jung,Chang-Liao Kuei-Shu,Jian Yi-Chuen,Wang Tien-Ko,Tsai Ming-Jinn

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. The International Technology Roadmap for Semiconductors (ITRS),2011

2. Charge-Trapping-Type Flash Memory Device With Stacked High-$k$ Charge-Trapping Layer

3. Experimental Characterization of the Vertical Position of the Trapped Charge in Si Nitride-Based Nonvolatile Memory Cells

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical principles and current status of emerging non-volatile solid state memories;Electronic Materials Letters;2015-07

2. Reliability of emerging nanodevices;Reliability Characterisation of Electrical and Electronic Systems;2015

3. The next generation mass storage devices – Physical principles and current status;Contemporary Physics;2014-02-11

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