Operation characteristics of Poly-Si nanowire charge-trapping flash memory devices with SiGe and Ge buried channels
Author:
Funder
Ministry of Science and Technology of Taiwan
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference13 articles.
1. Polysilicon thin-film transistors with channel length and width comparable to or smaller than the grain size of the thin film
2. Novel Gate-All-Around Poly-Si TFTs With Multiple Nanowire Channels
3. Enhanced Band-to-Band-Tunneling-Induced Hot-Electron Injection in p-Channel Flash by Band-gap Offset Modification
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Grain Size Engineering Using Amorphous-Ge/Si Stack to Enhance Channel Mobility for NAND Flash Memory;IEEE Transactions on Electron Devices;2022-10
2. Impacts of Electrical Field in Tunneling Layer on Operation Characteristics of Poly-Ge Charge-Trapping Flash Memory Device;IEEE Electron Device Letters;2020-12
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