Hydrogen-Sensing Properties of a Pd/AlGaN/GaN-Based Field-Effect Transistor Under a Nitrogen Ambience-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Hydrogen-Sensing Properties of a Pd/AlGaN/GaN-Based Field-Effect Transistor Under a Nitrogen Ambience

Published:2013-05 Issue:5 Volume:13 Page:1787-1793
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Hsu Chi-Shiang,Chen Huey-Ing,Chou Po-Cheng,Liou Jian-Kai,Chen Chun-Chia,Chang Chung-Fu,Liu Wen-Chau

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx5/7361/6486560/06449275.pdf?arnumber=6449275

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses;Journal of Materials Chemistry C;2023

2. A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications;Measurement;2021-12

3. High electron mobility transistor-based hydrogen sensor using ITO as a sensing layer;2021 IEEE Sensors;2021-10-31

4. High Performance NO₂ Gas Sensor Based on Pd-AlGaN/GaN High Electron Mobility Transistors with Thin AlGaN Barrier;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2020-04-30

5. Porous GaN Submicron Rods for Gas Sensor with High Sensitivity and Excellent Stability at High Temperature;ACS Applied Materials & Interfaces;2019-08-19

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP