High electron mobility transistor-based hydrogen sensor using ITO as a sensing layer-Reference-Cited by-同舟云学术

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High electron mobility transistor-based hydrogen sensor using ITO as a sensing layer

Published:2021-10-31 Issue: Volume: Page:
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Container-title:2021 IEEE Sensors
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Author:

Bin Taher Md. Iktiham,Halfaya Yacine,Alrammouz Rouba,Lazerges Mathieu,Randi Aurelien,Moudakir Tarik,Sama Nossikpendou Yves,Guermont Thomas,Pelissier Nicolas,Pichler Thomas,Piedevache Mederic,Pironon Jacques,Gautier Simon

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9639447/9639235/09639820.pdf?arnumber=9639820

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Electron Mobility Transistor (HEMT) based hydrogen sensor for deep-surface applications: Effect of Air and N2 atmosphere;International Journal of Hydrogen Energy;2024-02

2. Highly Sensitive Hydrogen Sensing Based on Tunable Diode Laser Absorption Spectroscopy with a 2.1 μm Diode Laser;Chemosensors;2022-08-11

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