Compensation of Mechanical Stress-Induced Drift of Bandgap References With On-Chip Stress Sensor-Reference-Cited by-同舟云学术

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Compensation of Mechanical Stress-Induced Drift of Bandgap References With On-Chip Stress Sensor

Published:2015-09 Issue:9 Volume:15 Page:5115-5121
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Motz Mario,Ausserlechner Udo,Holliber Michael

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx7/7361/7151772/07107981.pdf?arnumber=7107981

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 0.84-μA bandgap for high step-down DC-DC convertors with thermal compensation and protection;IEICE Electronics Express;2024

2. Silicon-based CMOS Stress Sensors for Tactile Perception based Smart Skin for Prostheses;2023 IEEE Biomedical Circuits and Systems Conference (BioCAS);2023-10-19

3. A -80dB PSRR 1.166ppm/°C bandgap voltage reference with improved high-order temperature compensation;IEICE Electronics Express;2023-08-25

4. On thermally-induced mechanical stress in high resistivity polysilicon resistors;2023 IEEE International Symposium on Circuits and Systems (ISCAS);2023-05-21

5. Structured Design and Evaluation of a Resistor-Based PUF Robust Against PVT-Variations;2023 26th International Symposium on Design and Diagnostics of Electronic Circuits and Systems (DDECS);2023-05-03

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