A -80dB PSRR 1.166ppm/°C bandgap voltage reference with improved high-order temperature compensation
Author:
Affiliation:
1. School of Materials Science and Engineering, Nankai University
2. Engineering Center of Thin Film Optoelectronic Technology, Ministry of Education, Nankai University
3. School of Electronic Information and Optical Engineering, Nankai University
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/elex/20/16/20_20.20230278/_pdf
Reference33 articles.
1. [1] G. Pan, et al.: “A 1.8V 0.918ppm/°C CMOS bandgap voltage reference with curvature-compensated,” IEICE Electron. Express 16 (2019) 20190616 (DOI: 10.1587/elex.16.20190616).
2. [2] A.N. Abd Rashid, et al.: “A wide temperature range bandgap reference circuit with MOS transistor curvature compensation,” 2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO) (2021) 130 (DOI: 10.1109/SENNANO51750.2021.9642532).
3. [3] S. Koudounas, et al.: “A novel CMOS bandgap reference circuit with improved high-order temperature compensation,” Proceedings of 2010 IEEE International Symposium on Circuits and Systems (2010) 4073 (DOI: 10.1109/ISCAS.2010.5537621).
4. [4] Y.-H. Chung, et al.: “A resistor-less CMOS bandgap reference with high-order temperature compensation,” 2021 IEEE Asia Pacific Conference on Circuit and Systems (APCCAS) (2021) 1 (DOI: 10.1109/APCCAS51387.2021.9687771).
5. [5] Y. Shen, et al.: “A 1.2ppm/°C TC, 0.094% inaccuracy 3-18V supply-range bandgap reference with self-compensation,” 2021 IEEE International Conference on Integrated Circuits, Technologies, and Applications (ICTA) (2021) 139 (DOI: 10.1109/ICTA53157.2021.9661711).
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