High Performance Ge-on-Si Photodetector With Optimized Light Field Distribution by Dual-Injection
Author:
Affiliation:
1. School of Information Engineering, Sanming University, Sanming, China
2. School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an, China
Funder
Natural Science Foundation of Fujian Province
National Natural Science Foundation of China
State Key Laboratory of Advanced Optical Communication Systems and Networks, China
Youth Project of Fujian Provincial Department of Education
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx7/4563994/9714037/09720097.pdf?arnumber=9720097
Reference20 articles.
1. Enhanced light trapping in Ge-on-Si-on-insulator photodetector by guided mode resonance effect
2. Fabrication and performance of Ge-on-Si PIN photodetectors;zhang;Proc Optoelectron Devices Integration,2018
3. High-Performance Microring Resonator Ge-on-Si Photodetectors by Optimizing Absorption Layer Length
4. Design and Simulation of Ge-on-Si Photodetectors With Electrically Tunable Spectral Response
5. Integrated high-power germanium photodetectors assisted by light field manipulation
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4. Configuration of the active region for the Ge-on-Si photodetector based on carrier mobility;Frontiers in Physics;2023-06-20
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