Enhanced light trapping in Ge-on-Si-on-insulator photodetector by guided mode resonance effect-Reference-Cited by-同舟云学术

Enhanced light trapping in Ge-on-Si-on-insulator photodetector by guided mode resonance effect

Published:2018-08-07 Issue:5 Volume:124 Page:053101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Liu Zhi¹²,Liu Jietao³^ORCID,Cheng Buwen¹²,Zheng Jun¹²^ORCID,Li Chuanbo¹²,Xue Chunlai¹²,Wang Qiming¹²

Affiliation:

1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China

2. College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China

3. School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, People's Republic of China

Funder

Beijing science and technology commission

National key research and development program of china

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5031453

Reference19 articles.

1. Integrating silicon photonics

2. High-performance Ge-on-Si photodetectors

3. High performance germanium-on-silicon detectors for optical communications

4. Ge-on-Si p-i-n Photodiodes With a 3-dB Bandwidth of 49 GHz

5. High-speed resonant-cavity-enhanced silicon photodetectors on reflecting silicon-on-insulator substrates

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