Endurance and Retention Characteristics of SONOS EEPROMs Operated using BTBT Induced Hot Hole Erase
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4017118/4017119/04017272.pdf?arnumber=4017272
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. SONOS Split-Gate eFlash Memory;Integrated Circuits and Systems;2017-09-10
2. A Comprehensive Characterization Method for Lateral Profiling of Interface Traps and Trapped Charges in P-SONOS Cell Devices;IEEE Transactions on Device and Materials Reliability;2017-03
3. Address Scrambling and Data Inversion Techniques for Yield Enhancement of NROM-Based ROMs;IEEE Transactions on Computers;2015-05-01
4. An improved multilevel cell programming technique for 4-bits/cell localized trapping SONOS memory devices;Microelectronics Reliability;2013-01
5. A Novel Random Telegraph Signal Method to Study Program/Erase Charge Lateral Spread and Retention Loss in a SONOS Flash Memory;IEEE Transactions on Electron Devices;2011-03
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