A Comprehensive Characterization Method for Lateral Profiling of Interface Traps and Trapped Charges in P-SONOS Cell Devices
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Published:2017-03
Issue:1
Volume:17
Page:121-129
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ISSN:1530-4388
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Container-title:IEEE Transactions on Device and Materials Reliability
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language:
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Short-container-title:IEEE Trans. Device Mater. Relib.
Author:
Guo Jyh-Chyurn,Du Pei-Ying
Funder
National Science Council and Ministry of Science and Technology
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials