Investigation of ESD devices in 0.18 μm SiGe BiCMOS process
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/8520/26927/01197773.pdf?arnumber=1197773
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A review of CMOS latchup and electrostatic discharge (ESD) in bipolar complimentary MOSFET (BiCMOS) Silicon Germanium technologies: Part II—Latchup;Microelectronics Reliability;2005-03
2. Low-leakage diode string designs using triple-well technologies for RF-ESD applications;IEEE Electron Device Letters;2003-09
3. ESD investigation of pn junction diodes in silicon-germanium heterojunction bipolar transistor;Electronics Letters;2003
4. The influence of heavily doped buried layer implants on electrostatic discharge (ESD), latchup, and a silicon germanium heterojunction bipolar transistor in a BiCMOS SiGe technology;2004 IEEE International Reliability Physics Symposium. Proceedings
5. The influence of deep trench and substrate resistance on the latchup robustness in a BiCMOS silicon germanium technology;2004 IEEE International Reliability Physics Symposium. Proceedings
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