Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/ gate dielectrics-Reference-Cited by-同舟云学术

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Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/ gate dielectrics

Published: Issue: Volume: Page:
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Container-title:2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual.
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Author:

Kerber A.,Cartier E.,Pantisano L.,Rosmeulen M.,Degraeve R.,Kauerauf T.,Groeseneken G.,Maes H.E.,Schwalke U.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8520/26927/01197718.pdf?arnumber=1197718

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