Cost-Effective Test Setup for Measuring Threshold Voltage Shift of GaN-HEMTs under Long-Term Drain-Voltage Stress
Author:
Affiliation:
1. Friedrich-Alexander-Universität Erlangen-Nürnberg,Electromagnetic Fields,Erlangen,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10382185/10382163/10382213.pdf?arnumber=10382213
Reference14 articles.
1. Measurement of Dynamic On-State Resistance of High-Voltage GaN-HEMTs under Real Application Conditions
2. Measuring of Dynamic On-State Resistance of GaN-HEMTs in Half-Bridge Application under Hard and Soft Switching Operation
3. GaN-based power devices: Physics, reliability, and perspectives
4. OFF-State Drain-Voltage-Stress-Induced V TH Instability in Schottky-Type p-GaN Gate HEMTs
5. Understanding the Threshold Voltage Instability During OFF-State Stress in p-GaN HEMTs
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