Short and long-term safe operating area considerations in LDMOS transistors-Reference-Cited by-同舟云学术

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Short and long-term safe operating area considerations in LDMOS transistors

Published: Issue: Volume: Page:
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Container-title:2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.
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Author:

Hower P.L.,Pendharkar S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/9994/32106/01493145.pdf?arnumber=1493145

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hybrid Source Laterally Diffused MOS Drain Engineering for ESD Robustness;IEEE Electron Device Letters;2023-12

2. Inverted SOA and Transient Non-Linearity of LDMOS Devices With RESURF-Implant;2022 IEEE International Conference on Emerging Electronics (ICEE);2022-12-11

3. High-k field plate DeNMOS design for enhanced performance and electrothermal SOA in switching applications;Microelectronics Journal;2022-12

4. Characterization of electrically stressed power device metallization using nano-CT imaging;Microelectronics Reliability;2022-08

5. Study on 20 V LDMOS With Stepped-Gate-Oxide Structure for PMIC Applications: Design, Fabrication, and Characterization;IEEE Transactions on Electron Devices;2022-02

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