GaN-ON-Si Failure Mechanisms and Reliability Improvements-Reference-Cited by-同舟云学术

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GaN-ON-Si Failure Mechanisms and Reliability Improvements

Published:2006 Issue: Volume: Page:
ISSN:
Container-title:2006 IEEE International Reliability Physics Symposium Proceedings
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Author:

Singhal S.,Roberts J.C.,Rajagopal P.,Li T.,Hanson A.W.,Therrien R.,Johnson J.W.,Kizilyalli I.C.,Linthicum K.J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4017118/4017119/04017138.pdf?arnumber=4017138

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Degradation Mechanism of Normally-On AlGaN/GaN HEMTs Under Short- and Long-Term HTRB Stress;IEEE Transactions on Electron Devices;2024-09

2. Thin channel Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown;Applied Physics Letters;2024-08-05

3. Reliability Assessment of 60-GHz GaN Power Amplifier Under High-Level Input RF Stress;IEEE Transactions on Electron Devices;2024-07

4. Electrical Characterization of AlGaN/GaN-HEMTs on Semi-Insulating GaN Substrates Doped With Fe, C, or Mn and Grown by Hydride Vapor Phase Epitaxy;IEEE Transactions on Electron Devices;2024-05

5. Effect of High-Temperature Storage on Electrical Characteristics of Hydrogen-Treated AlGaN/GaN High-Electron-Mobility Transistors;Micromachines;2024-04-30

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