Negative Capacitance Double-Gate Vertical Tunnel FET with Improved Subthreshold Characteristics
Author:
Affiliation:
1. Institute of Microelectronics, Chinese Academy of Sciences,Beijing,China,100029
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9856647/9856709/09856792.pdf?arnumber=9856792
Reference6 articles.
1. Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics
2. Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor
3. Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films
4. Low power negative capacitance FETs for future quantum-well body technology;yeung;VLSI Technology Systems and Applications (VLSI-TSA),2013
5. Use of negative capacitance to provide voltage amplification for low power nanoscale devices;salahuddin;Nano Letters,2008
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Impact of Ferroelectric Material BaTiO 3 on Negative Capacitance TFET Device and Its Circuit Application;Integrated Ferroelectrics;2023-09-02
2. Effect of shifted gate stack engineering over negative capacitance tunnel field effect transistor (NCTFET);Engineering Research Express;2022-09-01
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