Impact of Ferroelectric Material BaTiO <sub>3</sub> on Negative Capacitance TFET Device and Its Circuit Application-Reference-Cited by-同舟云学术

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Impact of Ferroelectric Material BaTiO ₃ on Negative Capacitance TFET Device and Its Circuit Application

Published:2023-09-02 Issue:1 Volume:237 Page:38-46
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Singh Amandeep¹,Sinha Sanjeet Kumar¹,Chander Sweta¹

Affiliation:

1. School of Electronics and Electrical Engineering, Lovely Professional University, Phagwara, Punjab, India

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2023.2227054

Reference21 articles.

1. Analytical Modeling of Short-Channel Effects in MFIS Negative-Capacitance FET Including Quantum Confinement Effects

2. TFET inverter static and transient performances in presence of traps and localized strain

3. 1T Capacitor-Less DRAM Cell Based on Asymmetric Tunnel FET Design

4. Scalability study on a capacitorless 1T-DRAM from single-gate PD-SOI to double-gate FinDRAM

5. Improvement of Electrical Characteristics of SiGe Source Based Tunnel FET Device

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