Statistical Modeling of Manufacturing Variability in GaN HEMT I-V Characteristics with ASM-HEMT-Reference-Cited by-同舟云学术

Statistical Modeling of Manufacturing Variability in GaN HEMT I-V Characteristics with ASM-HEMT

Published:2022-06-19 Issue: Volume: Page:
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Container-title:2022 IEEE/MTT-S International Microwave Symposium - IMS 2022
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Author:

Chavez Fredo¹,Miller Nicholas C.²,Davis Devin T.²,Khandelwal Sourabh¹

Affiliation:

1. Macquarie University,Australia

2. Air Force Research Laboratory Sensors Directorate,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9865233/9865240/09865304.pdf?arnumber=9865304

Reference9 articles.

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2. Accurate Nonlinear GaN HEMT Simulations from X- to Ka-Band using a Single ASM-HEMT Model

3. Statistical models for microwave gan hemts;xu;2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) IEEE,0

4. Forecasting method for HEMT MMIC large-signal RF yield

5. Machine Learning-Based Statistical Approach to Analyze Process Dependencies on Threshold Voltage in Recessed Gate AlGaN/GaN MIS-HEMTs

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1. Remembering John Bandler [In Memoriam];IEEE Microwave Magazine;2024-01

2. Nonlinear RF Modeling of GaN HEMTs With Fermi Kinetics Transport and the ASM-HEMT Compact Model [Young Professionals];IEEE Microwave Magazine;2024-01

3. Temperature Dependent Large-Signal Modeling of GaN HEMTs at Ka-Band using the ASM-HEMT;2023 IEEE Wireless and Microwave Technology Conference (WAMICON);2023-04-17

4. An ASM-HEMT for Large-Signal Modeling of GaN HEMTs in High-Temperature Applications;IEEE Journal of the Electron Devices Society;2023