A 70V UMOS Technology with Trenched LOCOS Process to Reduce Cgs-Reference-Cited by-同舟云学术

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A 70V UMOS Technology with Trenched LOCOS Process to Reduce Cgs

Published:2007-05 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's
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Author:

Wang Hao,Trescases Olivier,Xu H. P. Edward,Ng Wai Tung,Fukumoto Kenji,Ishikawa Akira,Furukawa Yuichi,Imai Hisaya,Naito Takashi,Sato Nobuyuki,Sakai Kimio,Tamura Satoru,Takasuka Kaoru

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4294904/4294905/04294962.pdf?arnumber=4294962

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental and simulated investigation of −100 V rated P-channel UMOSFETs under heavy ion radiation;Microelectronics Reliability;2023-12

2. A Comparative Study on Heavy-Ion Irradiation Impact on p-Channel and n-Channel Power UMOSFETs;IEEE Transactions on Nuclear Science;2022-06

3. U-MOSFET Structure;Advanced Power MOSFET Concepts;2010

4. Observation and Utilization of Boron Segregation in Trench MOSFETs to Improve Figure of Merit (FOM);IEEE Electron Device Letters;2008-11

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