A Comparative Study on Heavy-Ion Irradiation Impact on p-Channel and n-Channel Power UMOSFETs-Reference-Cited by-同舟云学术

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A Comparative Study on Heavy-Ion Irradiation Impact on p-Channel and n-Channel Power UMOSFETs

Published:2022-06 Issue:6 Volume:69 Page:1249-1256
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Wang Ying¹^ORCID,Yu Cheng-Hao²^ORCID,Li Xing-Ji³^ORCID,Yang Jian-Qun³

Affiliation:

1. School of Information Science and Technology, Dalian Maritime University, Dalian, China

2. Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China

3. National Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment, Harbin Institute of Technology, Harbin, China

Funder

National Research and Development Program for Major Research Instruments of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/9798446/09777683.pdf?arnumber=9777683

Reference30 articles.

1. Thermomechanical Stresses Analysis of a Single Event Burnout Process

2. Sensitive Volume and Triggering Criteria of SEB in Classic Planar VDMOS

3. Transmission Line Pulse Test Method for Estimating SEB Performance of $n$ -Channel Lateral DMOS Power Transistors

4. Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

5. Analysis of SEGR in Silicon Planar Gate Super-Junction Power MOSFETs

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Drain-Leakage Degradation During Single-Event Burnout Experiments in N-Channel Power VDMOS Transistors;IEEE Transactions on Electron Devices;2024-08

2. A Simulation-Based Study on Integration of Si/SiGe Heterojunction Diode in Retrograde p-Well Schottky Source MOSFET for Single-Event Effects Hardening and Reverse Recovery Enhancement;IEEE Transactions on Electron Devices;2024-08

3. Normalization Indicator of Ion-Induced Radiation Damage in Power VDMOS Transistors;IEEE Transactions on Nuclear Science;2024-08

4. Impact of ⁶⁰Co-γ Irradiation Pre-Treatment on Single-Event Burnout in N-Channel Power VDMOS Transistors;IEEE Electron Device Letters;2024-07

5. Reverse Recovery Enhanced and Single-Event Effects Hardened Power Schottky Source MOSFET With Integrated Retrograde p-Well Schottky Contact Super Barrier Rectifier;IEEE Transactions on Electron Devices;2024-05

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