Experimental and simulated investigation of −100 V rated P-channel UMOSFETs under heavy ion radiation-Reference-Cited by-同舟云学术

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Experimental and simulated investigation of −100 V rated P-channel UMOSFETs under heavy ion radiation

Published:2023-12 Issue: Volume:151 Page:115250
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Wu Xiao-dong,Yu Cheng-hao,Liu Yan,Hu Hai-fan

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Failure analysis and improvement of 60V power UMOSFET;Wang;Microelectron. Rel.,2014

2. High temperature bias-stress-induced instability in power trench-gated MOSFETs;Hao;Microelectron. Rel.,2014

3. The trench power MOSFET: part I—history, technology, and prospects;Williams;IEEE Trans. Electron Devices,2017

4. A 70V UMOS technology with trenched LOCOS process to reduce Cgs;Wang,2007

5. Gate-drain charge analysis for switching in power trench MOSFETs;Hueting;IEEE Trans. Electron Devices,2004

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