1. Advances in power MOSFET technologies for automotive applications;Owyang;Automot Power Electron,1989
2. Power semiconductor devices;Jayant Baliga,1996
3. Narazaki A, Hisamoto Y, Tadokoro C, Takeda M, Hagino H. A novel 30 V p-channel trench gate power MOSFET with ultra low on-state-resistance at low-gate-voltage. In: IEEE international symposium on power semiconductor devices and IC’s, ISPSD, vol. 97. 1997. p. 285–88.
4. Williams RK, Grabowski W, Darwish M, Chang M, Yilmaz H, Owyang K. A 1 million-cell 2.0-m/spl Omega/ 30-V TrenchFET utilizing 32 Mcell/in/sup 2/ density with distributed voltage clamping. International electron devices meeting, IEDM technical digest, 1997. p. 363–66.
5. JEDEC. Temperature, bias, and operating life. IESD22-A108D, November 2010.