Advances in power MOSFET technologies for automotive applications
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx2/877/3083/00097148.pdf?arnumber=97148
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Avalanche Ruggedness Capability and Improvement of 5-V n-Channel Large-Array MOSFET in BCD Process;IEEE Transactions on Electron Devices;2019-07
2. High temperature bias-stress-induced instability in power trench-gated MOSFETs;Microelectronics Reliability;2014-02
3. Double-Epilayer Structure for Low Drain Voltage Rating n-Channel Power Trench MOSFET Devices;IEEE Transactions on Electron Devices;2008-07
4. Modified three terminal charge pumping technique applied to vertical transistor structures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
5. The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs;2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167)
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