Breaking the Theoretical Limit of 6.5 kV-Class 4H-SiC Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial Growth
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/8746072/8757559/08757632.pdf?arnumber=8757632
Cited by 46 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. Comparison of electronic stopping cross sections for channeled implantation of Al ions between the 〈0001〉 and 〈11 2¯ 3〉 directions in 4H-SiC;Japanese Journal of Applied Physics;2024-01-01
3. An UMOSFET integrated with graded semi-super-junction and 3C/4H–SiC hetero-crystalline freewheeling junction;Microelectronics Journal;2023-12
4. 4H-SiC Floating Island JBS with Multi-Layer Floating Field Ring Termination;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
5. Optimization of 1700V 4H-SiC Semi-Superjunction Schottky Diode with Multi-Step Trenched Structure;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
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