High-performance InGaP/InxGa/sub 1-x/As HEMT with an inverted delta-doped V-shaped channel structure-Reference-Cited by-同舟云学术

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High-performance InGaP/InxGa/sub 1-x/As HEMT with an inverted delta-doped V-shaped channel structure

Published:1999-11 Issue:11 Volume:20 Page:548-550
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wen-Chan Liu ,Wen-Lung Chang ,Wen-Shiung Lour ,Hsi-Jen Pan ,Wei-Chou Wang ,Jing-Yuh Chen ,Kuo-Hui Yu ,Shun-Ching Feng

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/17312/00798039.pdf?arnumber=798039

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Comprehensive study of hydrogen sensing characteristics of Pd metal–oxide–semiconductor (MOS) transistors with Al0.24Ga0.76As and In0.49Ga0.51P Schottky contact layers;Sensors and Actuators B: Chemical;2007-01

4. Structure design criteria of dual-channel high mobility electron transistors;Solid-State Electronics;2007-01

5. Comparative study of In0.52Al0.48As/InxGa1−xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel;Semiconductor Science and Technology;2006-04-21

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