Monolithic 4-Terminal 1.2 kV/20 A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes-Reference-Cited by-同舟云学术

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Monolithic 4-Terminal 1.2 kV/20 A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

Published:2020-09 Issue: Volume: Page:
ISSN:
Container-title:2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Han Kijeong,Agarwal Aditi,Kanale Ajit,Baliga B. Jayant,Bhattacharya Subhashish,Cheng Tzu-Hsuan,Hopkins Douglas,Amarasinghe Voshadhi,Ransom John

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9163811/9170028/09170064.pdf?arnumber=9170064

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Concept and Technology for Full Monolithic MOSFET and JBS Vertical Integration in Multi-Terminal 4H-SiC Power Converters;Solid State Phenomena;2024-08-21

2. A Monolithic Bi-Directional GaN/SiC Hybrid Field-Effect Transistor;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

3. FET Junction Temperature Monitoring Using Novel On-Chip Solution;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

4. Innovations in GaN Four Quadrant Switch technology;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04

5. Design and Optimization of High-frequency Transformer for Isolated Single-Stage Three-Phase AC/DC Converter using Bidirectional Switches;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

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