The Floating NBL Architecture: Enabler of a Quasi-SOI process
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Single event transient analysis of isolation problems for the high side devices in a 0.18μm BCD Process;2023 5th International Conference on Radiation Effects of Electronic Devices (ICREED);2023-05-24
2. ESD-capability Impacts of the RESURF NBL Length in High-voltage nLDMOSs;2023 9th International Conference on Applied System Innovation (ICASI);2023-04-21
3. Parasitic Interactions with Intermediate Substrates and Methods to Mitigate their Impact: A Case Study in Voltage Protection ICs;2022 35th International Conference on VLSI Design and 2022 21st International Conference on Embedded Systems (VLSID);2022-02