Review and classification of gain cell eDRAM implementations-Reference-Cited by-同舟云学术

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Review and classification of gain cell eDRAM implementations

Published:2012-11 Issue: Volume: Page:
ISSN:
Container-title:2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel
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Author:

Teman Adam,Meinerzhagen Pascal,Burg Andreas,Fish Alexander

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6365376/6376891/06377022.pdf?arnumber=6377022

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Standard Cell Memory Based on 2T Gain Cell DRAM for Memory-Centric Accelerator Design;2023 IEEE 36th International System-on-Chip Conference (SOCC);2023-09-05

2. Energy Efficiency of Opportunistic Refreshing for Gain-Cell Embedded DRAM;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-04

3. Pseudo-Static Gain Cell of Embedded DRAM for Processing-in-Memory in Intelligent IoT Sensor Nodes;Sensors;2022-06-04

4. FinFET based ultra-low power 3T GC-eDRAM with very high retention time in sub-22 nm;Analog Integrated Circuits and Signal Processing;2022-05-31

5. eAP;Proceedings of the 52nd Annual IEEE/ACM International Symposium on Microarchitecture;2019-10-12

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