Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface-Reference-Cited by-同舟云学术

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Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface

Published:2021-09-13 Issue: Volume: Page:
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Container-title:ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC)
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Author:

Rrustemi B.,Viey A. G.,Jaud M.-A.,Triozon F.,Vandendaele W.,Leroux C.,Cluzel J.,Martin S.,Le Royer C.,Gwoziecki R.,Modica R.,Iucolano F.,Gaillard F.,Poiroux T.,Ghibaudo G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9631379/9631380/09631766.pdf?arnumber=9631766

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deep Insights into Recessed Gate MOS-HEMT Technology for Power Applications;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07

2. Calculation of the mobility in Al2O3/GaN electron channel: Effect of p-doping and comparison with experiments;Solid-State Electronics;2022-12

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